Cu( In , Ga)Se2 ( CIGS )由于其高效的潛力，是目前最成功的薄膜光伏技術。然而，為了在生產(chǎn)規(guī)模上重現(xiàn)實驗室中創(chuàng)造的高效率，必須嚴格控制四元CIGS吸收器。典型的層狀堆棧結構由鉬、CIGS、緩沖層(如. CdS )、i - ZnO和頂部透明導電氧化物( TCO )。采用濺射法、共蒸發(fā)法和化學浴沉積法沉積薄膜。因為每一層都極大地影響了最終器件的質量，所以所有5個層的必須在窄的目標規(guī)格內(nèi)生長。

對于CIGS應用，LayTec的計量系統(tǒng)可以24 / 7地無縫集成到生產(chǎn)線中。我們的Flames測量了所有層的反射率和膜厚。在線光致發(fā)光系統(tǒng)PearL確定CIGS吸收體的帶隙，并監(jiān)測具有高靈敏度的CIGS組成中的偏差。電渦流傳感器EddY測量所有導電層的電導率。

LayTec公司的光譜光致發(fā)光(PL)系統(tǒng)Pear L是大批量太陽能電池生產(chǎn)中在線CIGS監(jiān)測的理想工具。在生產(chǎn)條件下具有眾多優(yōu)點：

● 在整個模塊長度的不同點上進行可靠的CIGS表征；

● 空間分辨的關于CIGS吸收層材料的帶隙、材料組分和質量的信息；

● 直接對其沉積后的吸收體參數(shù)進行分析，不受其他層的干擾；

● 在成本密集型的后端處理之前，快速識別故障基板；

● 快速測量時間僅為0.1s

英文：

Cu(In,Ga)Se2 (CIGS) is currently the most successful thin-film photovoltaic technology because of its high efficiency potential. However, the quaternary CIGS absorber has to be controlled tightly to reproduce the high efficiencies created in labs on a production scale. The typical layer stack is comprised of molybdenum, CIGS, a buffer (e.g. CdS), i-ZnO and a transparent conducting oxide (TCO) on top. The layers are deposited by sputtering, co-evaporation, and chemical bath deposition. Because each layer dramatically influences the quality of the final device, all five  layers  must be grown within narrow target specs.

For CIGS applications, LayTec‘s metrology systems can be seamlessly integrated into production lines on a 24/7 basis. Our  Flames measures reflectance and film thickness on  all layers. The in-line photoluminescence system PearL determines the bandgap of the CIGS absorber and monitors derviations in the composition of CIGS with high sensititivity. The eddy-current sensor EddY measures conductivity of all conducting layers.

LayTec‘s spectroscopic photoluminescence (PL) system PearL is an ideal tool for in-line CIGS monitoring in high-volume solar cell production. It has numerous advantages under production conditions:

· reliable CIGS characterization across the full module length at different points;

· spatially resolved information about band gap, material composition and quality of the CIGS absorber material;

· analysis of the absorber parameters directly after its deposition without interference of other layers;

· fast identification of faulty substrates before the cost-intensive back-end processing;

· fast measurement time of only 0.1 s