晶體硅電池是由被稱為硅片的薄硅片制成的，這些硅片要么是單晶硅( c-Si )，要么是多晶硅( mc-Si )，通常也稱為多晶硅( pc-Si )。最近，準(zhǔn)單晶片也擴(kuò)大了可用于太陽(yáng)能電池制造的襯底材料的選擇。為了使太陽(yáng)能電池正常工作和提高效率，制造過(guò)程包括幾個(gè)專門的生產(chǎn)步驟，其中Lay Tec計(jì)量可以做出相當(dāng)大的貢獻(xiàn)。

改進(jìn)的陷光是通過(guò)濕化學(xué)電池表面紋理化過(guò)程實(shí)現(xiàn)的。此外，薄薄的氮化硅( Si N )層形成減反射涂層，使電池具有典型的藍(lán)色至深藍(lán)色甚至黑色外觀。為了增加其導(dǎo)電性，對(duì)晶體結(jié)構(gòu)進(jìn)行摻雜。其中p型導(dǎo)電層采用硼摻雜設(shè)計(jì)，n型導(dǎo)電層采用磷摻雜設(shè)計(jì)。在電池正面，電接觸磨粒條將電荷載流子從薄導(dǎo)體的晶格結(jié)構(gòu)中傳導(dǎo)出去，并在稱為母線的寬金屬條中相遇。在背面，一個(gè)大的鋁涂層形成了電池后部的接觸。

Lay Tec公司的在線計(jì)量系統(tǒng)為單晶c - Si太陽(yáng)能電池生產(chǎn)過(guò)程中的各種參數(shù)提供了精密和高精度的監(jiān)測(cè)：

● 晶片厚度測(cè)量

● 刻蝕步驟后的 織構(gòu)分析

● 層厚度和鈍化層折射率

● 鋁背接觸層電導(dǎo)率測(cè)量

英文：

Crystalline silicon cells are manufactured from razor-thin slices of silicon, called wafers, that are either mono-crystalline (c-Si) or multi-crystalline (mc-Si), often known also as poly-crystalline (pc-Si). Recently, quasi mono-crystalline wafers have also expanded the choice of substrate materials available for solar cell manufacturing. To enable proper function and increase efficiency of solar cells, the manufacturing process comprises several specialized production steps in which LayTec metrology can make considerable contributions.
Improved light trapping is achieved with a wet chemical cell surface texturization process. Additionally, a thinly deposited silicon nitride (SiN) layer forms the anti-reflective coating which gives the cell its typically blue to dark blue or even black appearance. In order to increase its conductivity, the crystal structure is doped. The p-type conductive layer is designed by doping with boron, the n-type by doping with phosphorus. On the front side of the cell, the electrical contact grit bars conduct charge carriers away from a lattice structure of thin conductors, which meet in wide metallic strips called bus bars. On the backside, a large aluminum coating forms the contacting of the cell rear.

LayTec's in-line metrology systems provide sophisticated and highly accurate monitoring of various parameters during mono-crystalline c-Si based solar cell production:
? Wafer thickness measurements
? Texture analysis after etching steps
? Layer thickness and refractive index of passivation layers
? Conductivity measurements of Al back-contact layers